3. | Mir Ali Jafari, A. A. Kordbacheh, Anna Dyrdał Electronic and magnetic properties of silicene monolayer under bi-axial mechanical strain: First principles study J. Magn. Magn. Mater., 554 , pp. 169260, 2022, ISSN: 0304-8853. Abstract | Links | BibTeX @article{Jafari2022b,
title = {Electronic and magnetic properties of silicene monolayer under bi-axial mechanical strain: First principles study},
author = {Mir Ali Jafari and A. A. Kordbacheh and Anna Dyrdał},
url = {https://www.sciencedirect.com/science/article/pii/S0304885322002116?via%3Dihub},
doi = {10.1016/j.jmmm.2022.169260},
issn = {0304-8853},
year = {2022},
date = {2022-07-15},
journal = {J. Magn. Magn. Mater.},
volume = {554},
pages = {169260},
abstract = {Mechanical control of electronic and magnetic properties of 2D Van-der-Waals heterostructures gives new possibilities for further development of spintronics and information-related technologies. Using the density functional theory, we investigate the structural, electronic and magnetic properties of silicene monolayer with substituted Chromium atoms and under a small biaxial strain (-6% < e < 8%). Our results indicate that the Cr-doped silicene nanosheets without strain have magnetic metallic, half-metallic or semiconducting properties depending on the type of substitution. We also show that the magnetic moments associated with the monomer and vertical dimer substitutions change very weakly with strain. However, the magnetic moment associated with the horizontal dimer substitution decreases when either compressive or tensile strain is applied to the system. Additionally, we show that the largest semiconductor band-gap is approximately 0.13 eV under zero strain for the vertical Cr-doped silicene. Finally, biaxial compressive strain leads to irregular changes in the magnetic moment for Cr vertical dimer substitution.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Mechanical control of electronic and magnetic properties of 2D Van-der-Waals heterostructures gives new possibilities for further development of spintronics and information-related technologies. Using the density functional theory, we investigate the structural, electronic and magnetic properties of silicene monolayer with substituted Chromium atoms and under a small biaxial strain (-6% < e < 8%). Our results indicate that the Cr-doped silicene nanosheets without strain have magnetic metallic, half-metallic or semiconducting properties depending on the type of substitution. We also show that the magnetic moments associated with the monomer and vertical dimer substitutions change very weakly with strain. However, the magnetic moment associated with the horizontal dimer substitution decreases when either compressive or tensile strain is applied to the system. Additionally, we show that the largest semiconductor band-gap is approximately 0.13 eV under zero strain for the vertical Cr-doped silicene. Finally, biaxial compressive strain leads to irregular changes in the magnetic moment for Cr vertical dimer substitution. |
2. | Mir Ali Jafari, Anna Dyrdał First Principle Study on Electronic and Transport Properties of Finite-Length Nanoribbons and Nanodiscs for Selected Two-Dimensional Materials Molecules, 27 (7), pp. 2228, 2022, ISSN: 1420-3049. Abstract | Links | BibTeX @article{Jafari2022c,
title = {First Principle Study on Electronic and Transport Properties of Finite-Length Nanoribbons and Nanodiscs for Selected Two-Dimensional Materials},
author = {Mir Ali Jafari and Anna Dyrdał},
url = {https://www.mdpi.com/1420-3049/27/7/2228},
doi = {10.3390/molecules27072228},
issn = {1420-3049},
year = {2022},
date = {2022-03-29},
journal = {Molecules},
volume = {27},
number = {7},
pages = {2228},
abstract = {Using the density functional theory, we calculate electronic states of various nanoribbons and nanodiscs formed from selected two-dimensional materials, such as graphene, silicene, and hexagonal boron nitride. The main objective of the analysis is a search for zero-energy states in such systems, which is an important issue as their presence indicates certain topological properties associated with chirality. The analysis is also supported by calculating transport properties.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Using the density functional theory, we calculate electronic states of various nanoribbons and nanodiscs formed from selected two-dimensional materials, such as graphene, silicene, and hexagonal boron nitride. The main objective of the analysis is a search for zero-energy states in such systems, which is an important issue as their presence indicates certain topological properties associated with chirality. The analysis is also supported by calculating transport properties. |
1. | Mir Ali Jafari, Małgorzata Wawrzyniak-Adamczewska, Stefan Stagraczyński, Anna Dyrdał, Józef Barnaś Spin valve effect in two-dimensional VSe2 system J. Magn. Magn. Mater., 548 , pp. 168921, 2022, ISSN: 0304-8853. Abstract | Links | BibTeX @article{Jafari2022,
title = {Spin valve effect in two-dimensional VSe2 system},
author = {Mir Ali Jafari and Małgorzata Wawrzyniak-Adamczewska and Stefan Stagraczyński and Anna Dyrdał and Józef Barnaś},
url = {https://www.sciencedirect.com/science/article/pii/S0304885321011215?via%3Dihub},
doi = {10.1016/j.jmmm.2021.168921},
issn = {0304-8853},
year = {2022},
date = {2022-03-15},
journal = {J. Magn. Magn. Mater.},
volume = {548},
pages = {168921},
abstract = {Vanadium based dichalcogenides, VSe2, are two-dimensional materials in which magnetic Vanadium atoms are arranged in a hexagonal lattice and are coupled ferromagnetically within the plane. However, adjacent atomic planes are coupled antiferromagnetically. This provides new and interesting opportunities for application in spintronics and data storage and processing technologies. A spin valve magnetoresistance may be achieved when magnetic moments of both atomic planes are driven to parallel alignment by an external magnetic field. The resistance change associated with the transition from antiparallel to parallel configuration is qualitatively similar to that observed in artificially layered metallic magnetic structures. Detailed electronic structure of VSe2 was obtained from DFT calculations. Then, the ballistic spin-valve magnetoresistance was determined within the Landauer formalism. In addition, we also analyze thermal and thermoelectric properties. Both phases of VSe2, denoted as H and T, are considered.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Vanadium based dichalcogenides, VSe2, are two-dimensional materials in which magnetic Vanadium atoms are arranged in a hexagonal lattice and are coupled ferromagnetically within the plane. However, adjacent atomic planes are coupled antiferromagnetically. This provides new and interesting opportunities for application in spintronics and data storage and processing technologies. A spin valve magnetoresistance may be achieved when magnetic moments of both atomic planes are driven to parallel alignment by an external magnetic field. The resistance change associated with the transition from antiparallel to parallel configuration is qualitatively similar to that observed in artificially layered metallic magnetic structures. Detailed electronic structure of VSe2 was obtained from DFT calculations. Then, the ballistic spin-valve magnetoresistance was determined within the Landauer formalism. In addition, we also analyze thermal and thermoelectric properties. Both phases of VSe2, denoted as H and T, are considered. |